Solution-processed quantum-dot light-emitting diodes combining ultrahigh operational stability, shelf stability, and luminance

Abstract The shelf-stability issue, originating from the ZnO-induced positive aging effect, poses a significant challenge to industrializing display technology based on solution-processed quantum-dot light-emitting diodes (QLEDs). Currently, none of proposed solutions can simultaneously inhibit exciton quenching caused by ZnO-based electron-transporting layer (ETL) and retain other advantages ZnO. Here in this work, we propose bilayer design ETL which buffer assembled SnO 2 nanoparticles (NPs) suppresses QD-ETL tunes charge balance while ZnO NPs provide high electron conductivity. As result, bottom-emitting QLED combining capped exhibit maximum luminance over 100,000 cd m −2 T 95 operational lifetime averaging 6200 h at 1000 premise entirely inhibiting aging.